BC857A - PNP General Purpose Amplifier

Fairchild Semiconductor

Datasheet Details

Part number	BC857A
Manufacturer	Fairchild Semiconductor
File Size	40.47 KB
Description	PNP General Purpose Amplifier
Datasheet	BC857A Datasheet
Additional preview pages of the BC857A datasheet.

📁 Similar Datasheet

BC857A - PNP Transistor (Multicomp)
BC857A - PNP Transistor (GME)
BC857A - PNP Silicon Epitaxial Transistors (Kingtronics)
BC857A - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
BC857A - SMALL SIGNAL PNP TRANSISTORS (STMicroelectronics)
BC857A - SMD General Purpose PNP Transistors (Diotec Semiconductor)
BC857A - PNP Small Signal Transistor (MCC)
BC857A - PNP SMALL SIGNAL TRANSISTOR (DIODES)
BC857A - PNP Silicon AF Transistor (Infineon)
BC857A - PNP Transistor (nexperia)

Other Datasheets by Fairchild Semiconductor

BC857 - PNP EPITAXIAL SILICON TRANSISTOR
BC857B - PNP General Purpose Amplifier
BC857C - PNP General Purpose Amplifier
BC857S - PNP Multi-Chip General Purpose Amplifier
BC850 - NPN EPITAXIAL SILICON TRANSISTOR
BC850A - NPN EPITAXIAL SILICON TRANSISTOR
BC850C - NPN EPITAXIAL SILICON TRANSISTOR
BC856 - PNP EPITAXIAL SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text

BC857A / BC857B / BC857C BC857A BC857B BC857C C E SOT-23 Mark: 3E / 3F / 3G B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 45 50 5.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.

Published: Mar 23, 2005 |