BCW66G
NPN General Purpose Amplifier
- This device is designed for general purpose amplifier applications at collector currents to 500m A.
- Sourced from process 13.
2 1
SOT-23
Mark: EG
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
- TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Operating and Storage Junction Temperature Range Value 45 75 5 1
- 55 ~ +150 Units V V V A °C
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICES IEBO h FE Parameter Collector-Base Breakdown Voltage...
