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BCX70J - NPN EPITAXIAL SILICON TRANSISTOR

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BCX70J GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS3904 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2.0mA, IB=0 IE=1.0µA, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.