Fairchild Semiconductor BD235
NPN Transistor
APPLICATIONS
● Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon TransistorABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 Value 45 60 100 45 60 80 45 60 100 5 2 6 25 150 - 65 ~ 150 Units V V V V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Collector Cut-off Current : BD233 : BD235 : BD237 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = 4...