Fairchild Semiconductor BD240A
PNP Epitaxial Silicon Transistor
APPLICATIONS
● Complement to BD239/A/B/C respectively 1 TO-220 PNP Epitaxial Silicon Transistor 1.Base 2.Collector 3.EmitterABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Base Voltage : BD240 : BD240A : BD240B : BD240C VCER Collector-Emitter Voltage : BD240 : BD240A : BD240B : BD240C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -2 -4 - 0.6 30 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) * Collector-Emitter Sustaining Voltage : BD240 : BD240A : BD240B : BD240C IC = - 30mA, IB = 0 ICEO ICES IEBO hFE Collector Cut-off Current : BD240/A : BD240B/C Collector Cut-off Current : BD240 : BD240A : BD240B : BD240C Emitter Cut-off Current * DC Current Gain VCE(sat...