Fairchild Semiconductor BD244C
PNP Epitaxial Silicon Transistor
| Part No. | BD244C |
|---|---|
| Datasheet | BD244C Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
● Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon TransistorABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD244 : BD244A : BD244B : BD244C VCEO Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -6 - 10 -2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTGELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C Collector Cut-off Current Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ.
