BSP50 Description
BSP50 BSP50 NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Emitter Ratings Ta=25°C unless otherwise noted Symbol VCER VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 45 60 5 800 - 55 ~ +150...