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BSP52 - NPN Darlington Transistor

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BSP50 NPN Darlington Transistor

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BSP52 BSP52 NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03. 2 1 4 3 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 90 5 800 - 55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits.