BSS100 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	BSS100
Manufacturer	Fairchild Semiconductor
File Size	284.54 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	BSS100 Datasheet
Additional preview pages of the BSS100 datasheet.

Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100 BSS123 S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS100 BSS123 Units VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage.

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Other Datasheets by Fairchild Semiconductor

BSS110 - P-Channel Enhancement Mode Field Effect Transistor
BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123W - N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138 - N-Channel MOSFET
BSS138K - N-Channel MOSFET
BSS138W - N-Channel MOSFET

Published: Mar 23, 2005 |