BSS100 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	BSS100
Manufacturer	Fairchild Semiconductor
File Size	284.54 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	BSS100 Datasheet
Additional preview pages of the BSS100 datasheet.

Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100 BSS123 S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS100 BSS123 Units VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage.

📁 Similar Datasheet

BSS100 - SIPMOS Small-Signal Transistor (Siemens Semiconductor Group)
BSS101 - SIPMOS Small-Signal Transistor (Siemens Semiconductor)
BSS110 - SIPMOS Small-Signal Transistor (Siemens Semiconductor)
BSS110 - P-channel enhancement mode vertical D-MOS transistor (NXP)
BSS119 - SIPMOS Small-Signal Transistor (Siemens Semiconductor Group)
BSS119 - SIPMOS Small-Signal Transistor (INFINEON)
BSS119N - Small-Signal-Transistor (Infineon Technologies)
BSS123 - N-Channel MOSFET (JCET)

Other Datasheets by Fairchild Semiconductor

BSS110 - P-Channel Enhancement Mode Field Effect Transistor
BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123W - N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138 - N-Channel MOSFET
BSS138K - N-Channel MOSFET
BSS138W - N-Channel MOSFET

Published: Mar 23, 2005 |