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BU407 - NPN Epitaxial Silicon Transistor

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BU407/407H BU407/407H High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 330 150 6 7 10 4 60 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 330V, VBE = 0 VCE = 200V, VBE = 0 VCE = 200V, VBE = 0 @ TC= 150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.