Fairchild Semiconductor CNY174M
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.| Part No. | CNY174M |
|---|---|
| Datasheet | CNY174M Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Phototransistor Optocouplers |
| Buy | Stock & Price |
FEATURES
● High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)● Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
● Current Transfer Ratio In Select Groups
● Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
● Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
APPLICATIONS
● Power Supply Regulators● Digital Logic Inputs
● Microprocessor Inputs
● Appliance Sensor Systems
● Industrial Controls
DESCRIPTION
Package Outlines Figure 1. Package Outlines Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M Figure 2. Schematics CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
