CNY174M Datasheet PDF - Fairchild Semiconductor Phototransistor Optocouplers Specs

CNY174M - Phototransistor Optocouplers

This page provides the datasheet information for the CNY174M, a member of the CNY171M Phototransistor Optocouplers family.

Datasheet Summary

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Figure 1.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

Datasheet Details

Part number	CNY174M
Manufacturer	Fairchild Semiconductor
File Size	307.69 KB
Description	Phototransistor Optocouplers
Datasheet	CNY174M Datasheet
Additional preview pages of the CNY174M datasheet.

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Full PDF Text Transcription

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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Features ■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Power Supply Regulators ■ Digital Logic Inputs ■ Microprocessor Inputs ■ Appliance Sensor Systems ■ Indus

Published: Oct 8, 2014 |