Fairchild Semiconductor CNY17F4M
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.| Part No. | CNY17F4M |
|---|---|
| Datasheet | CNY17F4M Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Phototransistor Optocouplers |
| Buy | Stock & Price |
FEATURES
● UL recognized (File # E90700, Vol. 2)● VDE recognized
DESCRIPTION
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● – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Package Outlines
APPLICATIONS
● Power supply regulators● Digital logic inputs
● Microprocessor inputs
● Appliance sensor systems
● Industrial controls Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M/7M CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
