Fairchild Semiconductor D45C8
PNP Power Amplifier
| Part No. | D45C8 |
|---|---|
| Datasheet | D45C8 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Power Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -4.0 -55 to +150 Units V A °CELECTRICAL CHARACTERISTICS
TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Emitter-(Base)Short VCE = -70V, IE = 0 ICEO Collector-Emitter-(Base)Open VCE = -55V, IE = 0 IEBO Emitter-Base Current VEB = -5.0V, IB = 0 On Characteristics hFE DC Current Gain VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -2.0A IC = -1.0A, IB = -50mA IC = -1.0A, IB = -100mA Cob Output Capacitance VCB = -10V, f = 1.0MHz fT Current Gain Bandwidth Product IC = -20mA, VCE = -4.0V tON td, Delay Time tr, Rise Time tOFF ts, Storage Time tf, Fall Time IC = -1.0...
