D5N50F
Features
- RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A
- Low gate charge ( Typ. 11n C)
- Low Crss ( Typ. 5p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
December 2007
Uni FETTM tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.
GD S
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted-
Symbol VDSS VGSS
IDM EAS IAR EAR dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25o C) -Continuous (TC = 100o C)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche...
