Fairchild Semiconductor D5N50F
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.| Part No. | D5N50F |
|---|---|
| Datasheet | D5N50F Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A● Low gate charge ( Typ. 11nC)
● Low Crss ( Typ. 5pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● RoHS compliant December 2007 UniFETTM tm
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. D GD S D-PAK MOSFETMAXIMUM RATINGS
TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to C...
