D5N50F - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 1.25Ω ( Typ. )@ VGS = 10V, ID = 1.75A.
Low gate charge ( Typ. 11nC).
Low Crss ( Typ. 5pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant December 2007 UniFETTM tm.

Fairchild Semiconductor

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Datasheet Details

Part number	D5N50F
Manufacturer	Fairchild Semiconductor
File Size	625.17 KB
Description	N-Channel MOSFET
Datasheet	D5N50F Datasheet
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FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.

Published: Aug 28, 2016 |