Datasheet4U Logo Datasheet4U.com

F10U20DN - ULTRA FAST RECOVERY POWER RECTIFIER

Datasheet Summary

Features

  • Ultrafast with soft recovery.
  • Low forward voltage.

📥 Download Datasheet

Datasheet preview – F10U20DN

Datasheet Details

Part number F10U20DN
Manufacturer Fairchild Semiconductor
File Size 52.72 KB
Description ULTRA FAST RECOVERY POWER RECTIFIER
Datasheet download datasheet F10U20DN Datasheet
Additional preview pages of the F10U20DN datasheet.

📁 Similar Datasheet

  • F1000LC120 - Extra Fast Recovery Diode (IXYS)
  • F1001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F100122 - 9-BIT BUFFER (National Semiconductor)
  • F100124 - Hex TTL-to-ECL Translator (National Semiconductor)
  • F100125 - Hex ECL-to-TTL Translator (National Semiconductor)
  • F100136 - 4-Stage Counter / Shift Register (National Semiconductor)
  • F100164 - 16 Input Multiplexer (National Semiconductor)
  • F100180 - HIGH-SPEED 6-BIT ADDER (National Semiconductor)
  • F100183 - 2 X 8-BIT RECODE MULTIPLIER (National Semiconductor)
  • F1001C - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 200 10 100 - 65 to +150 Units V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 4.
Published: |