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F11N60F - 600V N-Channel MOSFET

Datasheet Summary

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.32Ω.
  • Fast Recovery Type ( trr = 120ns).
  • Ultra Low Gate Charge (typ. Qg = 40nC).
  • Low Effective Output Capacitance (typ. Cosseff. =95pF).
  • 100% avalanche tested TM.

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Datasheet preview – F11N60F

Datasheet Details

Part number F11N60F
Manufacturer Fairchild Semiconductor
File Size 859.51 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet F11N60F Datasheet
Additional preview pages of the F11N60F datasheet.

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    FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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