Fairchild Semiconductor F12N10L
N-Channel Logic Level Power MOSFET
| Part No. | F12N10L |
|---|---|
| Datasheet | F12N10L Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel Logic Level Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 12A, 100V● rDS(ON) = 0.200Ω
● Design Optimized for 5V Gate Drives
● Can be Driven Directly from QMOS, NMOS, TTL Circuits
● Compatible with Automotive Drive Requirements
● SOA is Power-Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol D Packaging G S DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. C0 RFP12N10L
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
