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Data Sheet
RFP12N10L
October 2013
N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
RFP12N10L
TO-220AB
BRAND F12N10L
Features
• 12A, 100V • rDS(ON) = 0.
F12N10L Datasheet
