Datasheet4U Logo Datasheet4U.com

FCB110N65F - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @TJ = 150°C.
  • Typ. RDS(on) = 96 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 98 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 464 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCB110N65F N-Channel MOSFET INCHANGE
FCB199N65S3 N-Channel MOSFET INCHANGE
FCB199N65S3 MOSFET ON Semiconductor
FCB-MA130 USB 3.0 Interface InterTest
FCB-MA130 13 Mega Pixels Digital Camera Module Sony

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCB11N60 N-Channel MOSFET
FCB11N60F N-Channel MOSFET
FCB20N60 N-Channel MOSFET
FCB20N60F N-Channel MOSFET
FCB20N60_F085 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 V @TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom/Server Power Supplies • Solar Inverters • Computing Power Supplies • FPD TV Power/Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.