FCB290N80 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II MOSFET March 2015 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  Features - RDS(on) = 0.259 Typ.) - Ultra Low Gate Charge (Typ. Qg = 58 nC) - Low Eoss (Typ. 5.4 uJ @ 400V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) - 100% Avalanche Tested - RoHS pliant Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher...