FCB290N80 Datasheet PDF - Fairchild Semiconductor MOSFET Specs

FCB290N80 - MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

RDS(on) = 0.259 Typ. ).
Ultra Low Gate Charge (Typ. Qg = 58 nC).
Low Eoss (Typ. 5.4 uJ @ 400V).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 240 pF).
100% Avalanche Tested.
RoHS Compliant.

Datasheet Details

Part number	FCB290N80
Manufacturer	Fairchild Semiconductor
File Size	602.89 KB
Description	MOSFET
Datasheet	FCB290N80 Datasheet
Additional preview pages of the FCB290N80 datasheet.

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Full PDF Text Transcription

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FCB290N80 — N-Channel SuperFET® II MOSFET March 2015 FCB290N80 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  Features • RDS(on) = 0.259 Typ.) • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.4 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Published: Jan 13, 2017 |