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FCB290N80 - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • RDS(on) = 0.259 Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 58 nC).
  • Low Eoss (Typ. 5.4 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 240 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FCB290N80 — N-Channel SuperFET® II MOSFET March 2015 FCB290N80 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  Features • RDS(on) = 0.259 Typ.) • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.4 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.