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FCD900N60Z - N-Channel MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 820 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 13 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 49 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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FCD900N60Z — N-Channel SuperFET® II MOSFET December 2013 FCD900N60Z N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 820 mΩ • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.