FCD9N60NTM - N-Channel MOSFET

Fairchild (now onsemi)

General Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Key Features

RDS(on) = 0.330Ω ( Typ. )@ VGS = 10V, ID = 4.5A.
Ultra Low Gate Charge (Typ. Qg = 17.8nC).
Low Effective Output Capacitance.
100% Avalanche Tested.
RoHS Compliant SupreMOSTM February 2010.

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FCD9N60NTM n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FCD9N60NTM
Manufacturer	Fairchild (now onsemi)
File Size	796.59 KB
Description	N-Channel MOSFET
Datasheet	FCD9N60NTM Datasheet

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FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.