FCH041N60F
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 36 mΩ
- Ultra Low Gate Charge (Typ. Qg = 277 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 748 p F)
- 100% Avalanche Tested
- Ro HS pliant
Description
Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET II MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Super FET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional ponent and improve system reliability.
TO-247
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS
VGSS
IDM EAS IAR...
