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FCH067N65S3 - N-Channel MOSFET

General Description

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150 oC.
  • Typ. RDS(on) = 59 m.
  • Ultra Low Gate Charge (Typ. Qg = 78 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 715 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FCH067N65S3 — N-Channel SuperFET® III MOSFET FCH067N65S3 N-Channel SuperFET® III MOSFET 650 V, 44 A, 67 m June 2016 Features • 700 V @ TJ = 150 oC • Typ. RDS(on) = 59 m • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.