FCH077N65F_F085
Features
- Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A
- Typical Qg(tot) = 126 n C at VGS = 10V, ID = 27 A
- UIS Capability
- Qualified to AEC Q101
- Ro HS pliant
Description
TO-247
Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently Super FETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. Super FET II FRFET® MOSFET’s optimized body diode reverse recovery performance...
