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FCH125N60E - N-Channel SuperFET II Easy-Drive MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 650 V @TJ = 150°C.
  • Typ. RDS(on) = 102 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet preview – FCH125N60E

Datasheet Details

Part number FCH125N60E
Manufacturer Fairchild Semiconductor
File Size 695.03 KB
Description N-Channel SuperFET II Easy-Drive MOSFET
Datasheet download datasheet FCH125N60E Datasheet
Additional preview pages of the FCH125N60E datasheet.

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Full PDF Text Transcription

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FCH125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 Features • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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