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FCH25N60N - N-Channel MOSFET

Datasheet Summary

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Features

  • SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω.

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Datasheet Details

Part number FCH25N60N
Manufacturer Fairchild Semiconductor
File Size 632.62 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH25N60N Datasheet
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www.DataSheet.co.kr FCH25N60N N-Channel MOSFET FCH25N60N Features SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A • Ultra Low Gate Charge ( Typ.
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