FCH35N60 Datasheet | Fairchild Semiconductor

FCH35N60 N-Channel MOSFET March 2013 N-Channel SuperFET® MOSFET 600 V, 35 A, 98 mΩ Features - 650 V @ TJ = 150°C - Typ.RDS(on) = 79 mΩ - Ultra Low Gate Charge ( Typ. Qg = 139 nC ) - Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) - 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable...