Datasheet4U Logo Datasheet4U.com

FCP099N60E - N-Channel MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 87 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 88nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 309 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCP099N60E N-Channel MOSFET INCHANGE
FCP099N65S3 N-Channel MOSFET INCHANGE
FCP099N65S3 N-Channel MOSFET ON Semiconductor
FCP067N65S3 Power MOSFET ON Semiconductor
FCP067N65S3 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCP104N60 MOSFET
FCP104N60F N-Channel MOSFET
FCP110N65F MOSFET
FCP11N60 SuperFET MOSFET
FCP11N60F 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP099N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 37 A, 99 mΩ June 2016 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 87 mΩ • Ultra Low Gate Charge (Typ. Qg = 88nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.