FCP13N60N - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FCP13N60N
Manufacturer	Fairchild Semiconductor
File Size	939.79 KB
Description	N-Channel MOSFET
Datasheet	FCP13N60N Datasheet
Additional preview pages of the FCP13N60N datasheet.

Product details

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Features

RDS(on) = 0.244Ω ( Typ. ) @ VGS = 10V, ID = 6.5A.
Ultra Low Gate Charge ( Typ. Qg = 30.4nC).
Low Effective Output Capacitance.
100% Avalanche Tested.
RoHS Compliant TM SupreMOS August 2009.

📁 Similar Datasheet

FCP11N60N - N-Channel MOSFET (INCHANGE)
FCP125N60E - N-Channel MOSFET (INCHANGE)
FCP125N65S - N-Channel MOSFET (INCHANGE)
FCP125N65S3 - N-Channel MOSFET (INCHANGE)
FCP125N65S3R0 - N-Channel MOSFET (ON Semiconductor)
FCP150N65F - N-Channel MOSFET (INCHANGE)
FCP165N60E - N-Channel MOSFET (INCHANGE)
FCP165N65S3 - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FCP130N60 - MOSFET
FCP104N60 - MOSFET
FCP104N60F - N-Channel MOSFET
FCP110N65F - MOSFET
FCP11N60 - SuperFET MOSFET
FCP11N60F - 600V N-Channel MOSFET

Published: Oct 14, 2009 |