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FCP13N60N - N-Channel MOSFET

General Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Key Features

  • RDS(on) = 0.244Ω ( Typ. ) @ VGS = 10V, ID = 6.5A.
  • Ultra Low Gate Charge ( Typ. Qg = 30.4nC).
  • Low Effective Output Capacitance.
  • 100% Avalanche Tested.
  • RoHS Compliant TM SupreMOS August 2009.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.