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FCP16N60 - N-Channel MOSFET

Download the FCP16N60 datasheet PDF. This datasheet also covers the FCPF16N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 220 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 55 nC ).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 110 pF ).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCPF16N60_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FCP16N60N N-Channel MOSFET INCHANGE
FCP165N60E N-Channel MOSFET INCHANGE
FCP165N65S3 N-Channel MOSFET ON Semiconductor
FCP165N65S3R0 N-Channel MOSFET ON Semiconductor
FCP104N60F N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCP16N60N 600V N-Channel MOSFET
FCP165N60E N-Channel MOSFET
FCP104N60 MOSFET
FCP104N60F N-Channel MOSFET
FCP110N65F MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET® MOSFET 600 V, 16 A, 260 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 55 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 110 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.