FCP170N60 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II MOSFET September 2014 N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 mΩ Features - 650 V @TJ = 150°C - Typ. RDS(on) = 150 mΩ - Ultra Low Gate Charge (Typ. Qg = 42 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) - 100% Avalanche Tested - RoHS pliant Applications - Tele / Sever Power Supplies - Industrial Power Supplies - AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize...