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FCP190N60E - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 160 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 63 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 178 pF).
  • 100% Avalanche Tested.
  • An Integrated Gate Resistor.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ December 2014 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.