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FCP190N65F - N-Channel MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 168 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 60 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 304 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCP190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Solar Inverter • AC - DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.