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FCP36N60N - N-Channel MOSFET

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • RDS(on) = 81 mΩ (Typ. ) @ VGS = 10 V, ID = 18 A.
  • Ultra Low Gate Charge (Typ. Qg = 86 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 361 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FCP36N60N
Manufacturer Fairchild Semiconductor
File Size 822.58 KB
Description N-Channel MOSFET
Datasheet download datasheet FCP36N60N Datasheet
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Full PDF Text Transcription

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FCP36N60N / FCPF36N60NT — N-Channel SupreMOS® MOSFET FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ December 2013 Features • RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A • Ultra Low Gate Charge (Typ. Qg = 86 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
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