FCP650N80Z Overview
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand...
FCP650N80Z Key Features
- RDS(on) = 530 mTyp.)
- Ultra Low Gate Charge (Typ. Qg = 27 nC)
- Low Eoss (Typ. 2.8 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
