FCP650N80Z Datasheet | Fairchild Semiconductor

- N-Channel Super FET® II MOSFET December 2015 N-Channel Super FET® II MOSFET 800 V, 10 A, 650 m Features - RDS(on) = 530 mTyp.) - Ultra Low Gate Charge (Typ. Qg = 27 n C) - Low Eoss (Typ. 2.8 u J @ 400V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 124 p F) - 100% Avalanche Tested - Ro HS pliant - ESD Improved Capability Applications - AC - DC Power Supply - LED Lighting Description Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2k V HBM surge stress. Consequently, Super FET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. TO-220...