FCP850N80Z Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II MOSFET December 2015 N-Channel SuperFET® II MOSFET 800 V, 8 A, 850 m Features - Typ. RDS(on) = 710 mTyp.) - Ultra Low Gate Charge (Typ. Qg = 22 nC) - Low Eoss (Typ. 2.3 uJ @ 400V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) - 100% Avalanche Tested - RoHS pliant - ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...