FCP850N80Z Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand...
FCP850N80Z Key Features
- Typ. RDS(on) = 710 mTyp.)
- Ultra Low Gate Charge (Typ. Qg = 22 nC)
- Low Eoss (Typ. 2.3 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability