Datasheet Summary
- N-Channel SuperFET® III MOSFET
N-Channel SuperFET® III MOSFET
650 V, 44 A, 67 m
January 2016
Features
- 700 V @ TJ = 150 oC
- Typ. RDS(on) = 59 m
- Ultra Low Gate Charge (Typ. Qg = 78 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
- 100% Avalanche Tested
- RoHS pliant
Description
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate....
