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FCPF13N60NT - N-Channel MOSFET

Download the FCPF13N60NT datasheet PDF. This datasheet also covers the FCP13N60N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Key Features

  • RDS(on) = 0.244Ω ( Typ. ) @ VGS = 10V, ID = 6.5A.
  • Ultra Low Gate Charge ( Typ. Qg = 30.4nC).
  • Low Effective Output Capacitance.
  • 100% Avalanche Tested.
  • RoHS Compliant TM SupreMOS August 2009.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP13N60N_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCPF1300N80Z MOSFET
FCPF11N60 SuperFET MOSFET
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FCPF11N60NT N-Channel MOSFET
FCPF11N60T SuperFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.