Datasheet Summary
- N-Channel SuperFET® II FRFET® MOSFET
December 2014
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
Features
- 700 V @TJ = 150°C
- RDS(on) = 168 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 60 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
- 100% Avalanche Tested
- RoHS pliant
Applications
- LCD / LED / PDP TV
- Tele / Server Power Supplies
- Solar Inverter
- AC
- DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This...
