FCPF20N60 Datasheet | Fairchild Semiconductor

FCP20N60 / FCPF20N60 - N-Channel Super FET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel Super FET® MOSFET 600 V, 20 A, 190 mΩ Features - 650V @ TJ = 150°C - Typ. RDS(on) = 150 mΩ - Ultra Low Gate Charge (Typ. Qg = 75 n C ) - Low Effective Output Capacitance (Typ. Coss(eff.) = 165 p F ) - 100% Avalanche Tested Applications - Solar Inverter - AC-DC Power Supply Description Super FET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. TO-220...