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FCPF400N80Z - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Typ. RDS(on) = 340 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 43 nC).
  • Low Eoss (Typ. 4.1 uJ @ 400 V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 138 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCPF400N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF400N80Z N-Channel SuperFET® II MOSFET 800 V, 14 A, 400 mΩ Features • Typ. RDS(on) = 340 mΩ • Ultra Low Gate Charge (Typ. Qg = 43 nC) • Low Eoss (Typ. 4.1 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC-DC Power Supply • LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.