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FCU900N60Z - 600V N-Channel MOSFET

General Description

SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 675V @TJ = 150oC.
  • Max. RDS(on) = 900mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 13nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 49pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity SuperFET® II.

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FCU900N60Z 600V N-Channel MOSFET August 2012 FCU900N60Z 600V N-Channel MOSFET Features • 675V @TJ = 150oC • Max. RDS(on) = 900mΩ • Ultra Low Gate Charge (Typ. Qg = 13nC) • Low Effective Output Capacitance (Typ. Coss.eff = 49pF) • 100% Avalanche Tested • ESD Improved Capacity SuperFET® II Description SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.