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FDA20N50_F109 - N-Channel UniFET MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 230 mΩ (Max. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 45.6 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDA20N50_F109 — N-Channel UniFETTM MOSFET FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.