Datasheet Summary
- N-Channel UniFETTM MOSFET
N-Channel UniFETTM MOSFET
300 V, 59 A, 56 mΩ
Features
- RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A
- Low Gate Charge (Typ. 77 nC)
- Low Crss (Typ. 80 pF)
- 100% Avalanche Tested
Applications
- PDP TV
- Uninterruptible Power Supply
- AC-DC Power Supply
May 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat...
