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FDB024N04AL7 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batt

Key Features

  • RDS(on) = 2.0 mΩ (Typ. )@ VGS = 10 V, ID = 80 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6.