Datasheet Summary
FDB024N04AL7 N-Channel PowerTrench® MOSFET
June 2014
N-Channel PowerTrench® MOSFET
40 V, 219 A, 2.4 mΩ
Features
- RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible...