FDB024N04AL7
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
- RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS Compliant
