Datasheet Summary
FDB024N08BL7 N-Channel PowerTrench® MOSFET
June 2014
N-Channel PowerTrench® MOSFET
80 V, 229 A, 2.4 mΩ
Features
- RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on)
- QG
- Low Reverse Recovery Charge, Qrr = 112 nC
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- RoHS pliant
- Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
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