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FDB024N08BL7 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Key Features

  • RDS(on) = 1.7 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr = 112 nC.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • RoHS Compliant.
  • Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) *QG • Low Reverse Recovery Charge, Qrr = 112 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • RoHS Compliant • Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1 Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.