FDB070AN06A0
Features
Applications
- RDS(on) = 6.1 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- Synchronous Rectification for ATX / Server / Tele PSU
- Qg(tot) = 51 n C ( Typ.) @ VGS = 10 V
- Battery Protection Circuit
- Low Miller Charge
- Motor Drives and Uninterruptible Power Supplies
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 97o C, VGS = 10V) Continuous (TA = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25o C
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient, Max. (Note 2) Thermal Resistance Junction to Ambient, Max., 1in2 copper pad area
60...
