Datasheet4U Logo Datasheet4U.com

FDB110N15A - MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Features

  • RDS(on) = 9.25 mΩ (Typ. ) @ VGS = 10 V, ID = 92 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDB110N15A

Datasheet Details

Part number FDB110N15A
Manufacturer Fairchild Semiconductor
File Size 653.27 KB
Description MOSFET
Datasheet download datasheet FDB110N15A Datasheet
Additional preview pages of the FDB110N15A datasheet.

📁 Similar Datasheet

  • FDB110N15A - N-Channel MOSFET (INCHANGE)
  • FDB101 - Silicon Bridge Rectifiers (LGE)
  • FDB101S - Silicon Bridge Rectifiers (LGE)
  • FDB101S - 1.0 Amp Silicon Bridge Rectifiers (SeCoS)
  • FDB102 - Silicon Bridge Rectifiers (LGE)
  • FDB102S - Silicon Bridge Rectifiers (LGE)
  • FDB102S - 1.0 Amp Silicon Bridge Rectifiers (SeCoS)
  • FDB103 - Silicon Bridge Rectifiers (LGE)
  • FDB103S - Silicon Bridge Rectifiers (LGE)
  • FDB103S - 1.0 Amp Silicon Bridge Rectifiers (SeCoS)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB110N15A — N-Channel PowerTrench® MOSFET April 2015 FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ Features • RDS(on) = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Published: |