Fairchild Semiconductor FDB13AN06A0
MOSFET
| Part No. | FDB13AN06A0 |
|---|---|
| Datasheet | FDB13AN06A0 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
APPLICATIONS
● rDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A● Motor Load Control
● Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V
● DC-DC converters and Off-line UPS
● Low Miller Charge
● Distributed Power Architectures and VRMs
● Low Qrr Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82555 D D G S D2-PAK G S MOSFET
MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Cas
