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FDB15N50 - N-Channel MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • Low gate charge Qg results in simple drive requirement (Typ. 33 nC).
  • Improved Gate, avalanche and high reapplied dv/dt ruggedness.
  • Reduced RDS(on) ( 330mΩ ( Typ. ) @ VGS = 10 V, ID = 7.5 A).
  • Reduced Miller capacitance and low Input capacitance (Typ. Crss = 16 pF).
  • Improved switching speed with low EMI.
  • 175oC rated junction temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB15N50 — N-Channel UniFETTM MOSFET FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ November 2013 Features • Low gate charge Qg results in simple drive requirement (Typ. 33 nC) • Improved Gate, avalanche and high reapplied dv/dt ruggedness • Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A) • Reduced Miller capacitance and low Input capacitance (Typ. Crss = 16 pF) • Improved switching speed with low EMI • 175oC rated junction temperature Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.